Vapor deposition apparatus and method of manufacturing organic light-emitting display apparatus

ABSTRACT

A vapor deposition apparatus efficiently performs a deposition process to form a thin film with improved characteristics on a substrate, and a method manufactures an organic light-emitting display apparatus by using such vapor deposition apparatus. The vapor deposition apparatus includes a body including an upper member and a lateral member coupled to the upper member; a receiving portion disposed to face one side of the lateral member; a stage disposed in the receiving portion and supporting the substrate; a plurality of first injection portions disposed in the lateral member and injecting at least one gas into a space between the lateral member and the upper member; a second injection portion disposed in the upper member and injecting at least one gas into the space between the lateral member and the upper member; and a plasma generating portion including a coil and a power source connected to the coil.

CROSS-REFERENCE TO RELATED APPLICATIONS AND CLAIM OF PRIORITY

This application is a divisional application of the prior applicationSer. No. 13/607,534 filed in the U.S. Patent & Trademark Office on 7Sep. 2012 and assigned to the assignees of the present invention.Furthermore, this application makes reference to, incorporates the sameherein, and claims all benefits accruing under 35 U.S.C. § 119 from anapplication earlier filed in the Korean Intellectual Property Office on1 Nov. 2011 and there duly assigned Serial No. 10-2011-0112877.

BACKGROUND OF THE INVENTION Field of the Invention

An embodiment of the present invention relates to a vapor depositionapparatus and a method of manufacturing an organic light-emittingdisplay apparatus, and more particularly, to a vapor depositionapparatus efficiently performing a deposition process and improvingcharacteristics of a deposited film, and a method of manufacturing anorganic light-emitting display apparatus.

Description of the Related Art

Semiconductor devices, display apparatuses, and other electronic devicesgenerally include a plurality of thin films. A plurality of thin filmsmay be formed with various methods, one of which is a vapor depositionmethod.

In a vapor deposition method, at least one kind of gas is used to form athin film. Examples of the vapor deposition method include chemicalvapor deposition (CVD), atomic layer deposition (ALD), and the like.

Organic light-emitting display apparatuses have a larger viewing angle,better contrast characteristics, and a faster response rate incomparison with other display apparatuses, and thus the organiclight-emitting display apparatuses have drawn attention asnext-generation display devices.

An organic light-emitting display apparatus generally includes anintermediate layer including an organic emission layer disposed betweena first electrode and a second electrode that are arranged opposite toeach other, and the organic light-emitting display apparatus furtherincludes at least one thin film. A deposition process may be used toform the thin film in an organic light-emitting display apparatus.

Even though the organic light-emitting display apparatuses have beendeveloped to have larger size and higher resolution, however, it isdifficult to deposit a large sized thin film with desiredcharacteristics. Furthermore, the efficiency of a process for formingsuch large sized thin film is difficult to be increased.

SUMMARY OF THE INVENTION

An embodiment of the present invention provides a vapor depositionapparatus efficiently performing a deposition process and improvingcharacteristics of a deposited thin film, and a method of manufacturingan organic light-emitting display apparatus.

In accordance with an aspect of the present invention, there is provideda vapor deposition apparatus for depositing a thin film on a substrate.The vapor deposition apparatus may include a body including an uppermember and a lateral member coupled to the upper member; a receivingportion disposed to face one side of the lateral member; a stagedisposed within the receiving portion and supporting the substrate; aplurality of first injection portions disposed in the lateral member andinjecting at least one gas into a space between the lateral member andthe upper member; a second injection portion disposed in the uppermember and injecting at least one gas into the space between the lateralmember and the upper member; and a plasma generating portion including acoil and a power source connected to the coil.

The first injection portions may be disposed at one side of the lateralmember and at another side of the lateral member disposed opposite toand facing the one side of the lateral member.

The vapor deposition apparatus may further include a slit portiondisposed between the lateral member and the receiving portion, and theslit portion is connected to a DC power source.

The receiving portion may include an exhaust portion, and the exhaustportion is disposed below the stage.

The vapor deposition apparatus may further include an exhaust portdisposed in the lateral member and formed so as to be spaced apart fromthe first injection portions.

Each first injection portion may include one end formed to face thespace between the lateral member and the upper member, and the exhaustport is disposed closer to the upper member in comparison with the oneend of the first injection portions.

The vapor deposition apparatus may further include a cover formed so asto cover a surface of the coil, with the surface facing the substrateamong surfaces of the coil.

The cover may be formed of an insulating material.

The vapor deposition apparatus may further include an insulating memberdisposed in the lateral member.

Each first injection portion may include one end formed to face thespace between the lateral member and the upper member, and theinsulating member is formed not to overlap with the one end of the firstinjection portion.

The vapor deposition apparatus may further include a mask including anopening for depositing a desired pattern on the substrate.

The upper member and the lateral member are formed so as to be coupledto or separable from each other.

In accordance with another aspect of the present invention, there isprovided a vapor deposition apparatus including a plurality of modules,a receiving portion, and a stage to deposit a thin film on a substrate.Each module may include a body including an upper member and a lateralmember coupled to the upper member; a plurality of first injectionportions disposed in the lateral member and injecting at least one gasinto a space between the lateral member and the upper member; a secondinjection portion disposed in the upper member and injecting at leastone gas into the space between the lateral member and the upper member;and a plasma generating portion including a coil disposed at one surfaceof the upper member and a power source connected to the coil. Thereceiving portion may be formed to geometrically correspond to all themodules. The stage may be disposed in the receiving portion. Thesubstrate may be disposed on the stage.

The vapor deposition apparatus may further include a driving unit. Thedriving unit may move the substrate in the receiving portion when thesubstrate is disposed on the stage.

The plurality of modules may be arranged in parallel in one direction,and the driving unit may move the substrate in a direction parallel tothe direction in which the modules are arranged.

The driving unit may move the substrate backward and forward.

The receiving portion may include an exhaust portion, and the exhaustportion may be disposed below the stage.

Each module may further include slit portions disposed between thelateral member and the receiving portion, and the slit portions may beconnected to a DC power source.

The first injection portions included in each module may be disposed atone side of the lateral member and at another side of the lateral memberfacing the one side of the lateral member.

Each module may further include an exhaust port disposed in the lateralmember and formed so as to be spaced apart from the first injectionportions.

Each first injection portion may include one end formed so as to facethe space between the lateral member and the upper member, and theexhaust port is disposed closer to the upper member than to the one endof the first injection portion.

Each module may further include a cover formed to cover a surface of thecoil, with the surface facing the substrate among surfaces of the coil.

The cover may be formed of an insulating material.

Each module may further include an insulating member disposed in thelateral member.

Each first injection portion may include one end formed so as to facethe space between the lateral member and the upper member, and theinsulating member may be formed so as not to overlap with the one end ofthe first injection portion.

The vapor deposition apparatus may further include a mask including anopening for depositing a desired pattern on the substrate.

The modules may be formed so as to be coupled to or separable from eachother, and the upper member and the lateral member of each of themodules may be formed so as to be coupled to or separable from eachother.

In accordance with still another aspect of the present invention, thereis provided a method of manufacturing an organic light-emitting displayapparatus by using a vapor deposition apparatus, with the organiclight-emitting display apparatus including a substrate and a thin filmformed on the substrate. The organic light-emitting display apparatusmay include a first electrode, an intermediate layer including anorganic emission layer, and a second electrode. The vapor depositionapparatus may include a plurality of modules, a receiving portiongeometrically corresponding to all the modules, and a stage disposedwithin the receiving portion and supporting the substrate. Each modulemay include a body including an upper member and a lateral membercoupled to the upper member; a plurality of first injection portionsdisposed in the lateral member and injecting at least one gas into aspace between the lateral member and the upper member; a secondinjection portion disposed in the upper member and injecting at leastone gas into the space between the lateral member and the upper member;and a plasma generating portion including a coil disposed at one surfaceof the upper member and a power source connected to the coil. The methodof forming the thin film of the organic light-emitting display apparatusmay include disposing the substrate on the stage, and injecting gastoward the substrate through the first and second injection portions ofeach of the modules when the substrate disposed on the stage moveswithin the receiving portion.

The forming of the thin film may include forming an encapsulating layeron the second electrode.

The forming of the thin film may include forming an insulating layer.

The forming of the thin film may include forming a conductive layer.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention, and many of the attendantadvantages thereof, will be readily apparent as the same becomes betterunderstood by reference to the following detailed description whenconsidered in conjunction with the accompanying drawings in which likereference symbols indicate the same or similar components, wherein:

FIG. 1 is a cross-sectional view schematically illustrating a vapordeposition apparatus constructed with an embodiment of the presentinvention;

FIG. 2 is a cross-sectional view schematically illustrating a vapordeposition apparatus constructed with another embodiment of the presentinvention;

FIG. 3 is a cross-sectional view schematically illustrating an organiclight-emitting display apparatus manufactured based on a method ofmanufacturing an organic light-emitting display apparatus according tostill another embodiment of the present invention;

FIG. 4 is a flow chart illustrating an example of an operation method ofthe vapor deposition apparatus 100 of FIG. 1;

FIG. 5 is a flow chart illustrating another example of an operationmethod of the vapor deposition apparatus 100 of FIG. 1; and

FIG. 6 is a flow chart illustrating an example of an operation method ofthe vapor deposition apparatus 500 of FIG. 2.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, exemplary embodiments of the present invention will bedescribed more fully with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view schematically illustrating a vapordeposition apparatus constructed with an embodiment of the presentinvention.

Referring to FIG. 1, the vapor deposition apparatus 100 includes a body130, a receiving portion 120, a stage 105, a plurality of firstinjection portions 141, a plurality of second injection portions 142,and a plasma generating portion 190. The body 130 includes a lateralmember 131 and an upper member 132. The plasma generating portion 190includes a coil 191 and a power source 192.

The upper member 132 and the lateral member 131 are disposed so as todefine a predetermined space SPACE. The lateral member 131 has a hollowpillar shape, for example, a hollow cylinder shape. The upper member 132is disposed at an upper portion of the lateral member 131, and thus thepredetermined space SPACE may be formed between the upper member 132 andthe lateral member 131. That is, the body 130 has a shape in which theupper member 132 covers the inner space SPACE of the lateral member 131.

The lateral member 131 and the upper member 132 may be formed so as tobe coupled to and separable from each other. In detail, a flange and aring may be used to couple the lateral member 131 and the upper member132 to each other.

When the lateral member 131 and the upper member 132 are separated fromeach other, inspection and washing of the vapor deposition apparatus 100including the lateral member 131 and the upper member 132 may be easilyperformed.

The first injection portions 141 are disposed in the lateral member 131.One end E1 of each first injection portion 141 is connected to theoutside of the lateral member 131 so as to receive gas, and another endE2 of each first injection portion 141 is formed so as to face the spacedisposed between the lateral member 131 and the upper member 132, andthus gas may be injected into the space between the lateral member 131and the upper member 132 through each first injection portion 141. Thefirst injection portions 141 may be disposed at one side S1 of thelateral member 131 and at another side S2 of the lateral member 131facing the one side of the lateral member 131.

The same gas or different gases may be injected through the firstinjection portions 141 respectively disposed at sides of the lateralmember 131.

The second injection portions 142 are disposed in the upper member 132.The second injection portions 142 may be disposed in a center portion ofthe upper member 132, or alternatively, a desired number of secondinjection portions 142 may be disposed in desired positions of the uppermember 132. Gas is injected into a lower portion of the upper member 132through the second injection portions 142, and consequently the gas isinjected into the space SPACE disposed between the upper member 132 andthe lateral member 131.

The plasma generating portion 190 includes the coil 191 and the powersource 192. In detail, the coil 191 is disposed below the upper member132 and is connected to the power source 192. The power source 192applies radio frequency (RF) power to the coil 191. The coil 191 is akind of induction coil and converts gas to a plasma state. In detail,the coil 191 may excite gas supplied through the second injectionportions 142 to a plasma state. Also, the coil 191 may generate plasmausing gas supplied through the second injection portions 142, and thenexcite gas supplied through the first injection portions 141 to a plasmastate by using the plasma generated by the coil 191. The coil 191 maydirectly excite gas supplied through the first injection portions 141 toa plasma state.

A cover 160 is disposed on the coil 191. The cover 160 is formed of aninsulating material. The cover 160 prevents the coil 191 from beingdamaged due to plasma or the like. The cover 160 is formed so as not tooverlap the second injection portions 142. That is, the second injectionportions 142 may be formed so as to penetrate the cover 160.

An insulating member 170 is formed in correspondence with an innersurface of the lateral member 131. The insulating member 170 protectsthe inner surface of the lateral member 131 and facilitates efficientgeneration and maintenance of plasma. The insulating member 170 isformed so as not to overlap the first injection portions 141. In detail,the insulating member 170 is disposed so as not to overlap one end ofthe first injection portions 141 facing the space between the lateralmember 131 and the upper member 132. The insulating member 170 may beformed of quartz, but the present invention is not limited thereto.

An exhaust port 180 is formed in the lateral member 131. The exhaustport 180 may be connected to a pump (not shown), and dischargesunnecessary gas generated during a vapor deposition process andremaining in the space between the lateral member 131 and the uppermember 132. The exhaust port 180 is disposed at an upper side of thelateral member 131. That is, each first injection portion 141 includesone end formed so as to face the space between the lateral member 131and the upper member 132, and the exhaust port 180 is disposedrelatively closer to the upper member 132 in comparison with the one endof each first injection portion 141.

The receiving portion 120 is disposed so as to face the body 130. Thereceiving portion 120 may be disposed opposite to and face the uppermember 132. In detail, the receiving portion 120 is disposed at one sideof the lateral member 131. The receiving portion 120 includes an exhaustportion 121 at a lower side thereof. The exhaust portion 121 is an exitfor discharging gas, and may be connected to the pump to facilitate thedischarging of gas.

The stage 105 is disposed in the receiving portion 120, in particular,above the exhaust portion 121. A substrate 101 is disposed on the stage105. In detail, the substrate 101 is disposed on an upper surface of thestage 105.

Then, a fixing unit (not shown) may be disposed so as to fix thesubstrate 101 on the stage 105. Examples of the fixing unit may includea clamp, a pressure member, an adhesive material, and the like.

A mask 110 is disposed on the substrate 101. The mask 110 includes anopening (not shown) formed so as to have a predetermined shapecorresponding to a pattern of a thin film to be formed on the substrate101.

A plurality of slit portions 151 are disposed between the body 130 andthe receiving portion 120, specifically, between the lateral member 131and the receiving portion 120. The slit portions 151 are connected to adirect current (DC) power source 150. The slit portions 151 improve thecharacteristic of plasma generated in the space between the lateralmember 131 and the upper member 132 through the coil 191. That is, theslit portions 151 improve the characteristic of a thin film to be formedon the substrate 101 and improve the efficiency of a thin film formingprocess by allowing plasma to have a uniform characteristic and to facethe substrate 101.

Hereinafter, an example of an operation of the vapor depositionapparatus 100 of the current embodiment will be briefly described. FIG.4 is a flow chart illustrating the example of an operation method of thevapor deposition apparatus 100 of FIG. 1.

The substrate 101 is disposed on the stage 105 (S41). The mask 110having the opening (not shown) patterned according to a desired patternis disposed on the substrate 101.

A source gas is injected through the first injection portions 141 (S42).The source gas is injected into the space between the lateral member 131and the upper member 132. The source gas is directed to the substrate101 disposed in the receiving portion 120 through the slit portions 151.

Specifically, the source gas may contain aluminum (Al) atoms.

The source gas is absorbed onto an upper surface of the substrate 101.

Then, an exhaust process is performed through the exhaust portion 121 toform a single atomic layer or multiple atomic layers of the source gason the substrate 101 (S43). That is, a single layer of, or multiplelayers of, aluminum (Al) atoms are formed. Here, the exhaust process maybe performed using a purge gas. The purge gas may be injected throughthe second injection portions 142. Also, the source gas and the purgegas remaining after the exhaust process may be easily removed using theexhaust port 180 formed in the lateral member 131. In particular, theexhaust port 180 may be disposed at the upper side the lateral member131 so as to easily exhaust residual gas around the upper member 132.

Then, a reaction gas is injected through the second injection portions142 (S44). The reaction gas injected through the second injectionportions 142 is excited to a plasma state by the plasma generatingportion 190. Components of the reaction gas in a plasma state passthrough the space between the lateral member 131 and the upper member132 and then through the slit portions 151, and the components movetoward the substrate 101. Specifically, the reaction gas may containoxygen (O) atoms.

The reaction gas excited to a plasma state is absorbed onto the uppersurface of the substrate 101.

Then, the exhaust process is performed through the exhaust portion 121so as to form a single atomic layer or multiple atomic layers of thereaction gas on the substrate 101 (S45). In other words, a single layerof, or multiple layers of, oxygen atoms are formed. In this regard, theexhaust process may be performed using a purge gas. The purge gas may beinjected through the second injection portions 142.

Also, the source gas and the purge gas remaining after the exhaustprocess may be easily removed using the exhaust port 180 formed in thelateral member 131 (S46).

Accordingly, a single atomic layer of or multiple atomic layers of thesource gas and the reaction gas are formed on the substrate 101. Inother words, an aluminum oxide layer AlxOy is formed, wherein x and ymay be adjusted according to process conditions. In the currentembodiment, a process of forming the aluminum oxide layer AlxOy isdescribed for convenience of explanation, but the present invention isnot limited thereto. That is, the present invention may be applied to aprocess of forming any of other various layers, e.g., an insulatinglayer and a conductive layer.

Hereinafter, another example of an operation of the vapor depositionapparatus 100 of the current embodiment will be described. FIG. 5 is aflow chart illustrating the another example of an operation method ofthe vapor deposition apparatus 100 of FIG. 1.

The substrate 101 is disposed on the stage 105 (S51).

A source gas and a reaction gas may be injected through the firstinjection portions 141 (S53). An additional plasma gas for generatingplasma may be injected through the second injection portions 142 (S52).In other words, an additional plasma gas is injected into the secondinjection portions 142 (S52) at the same time as or before a source gasis injected through the first injection portions 141 (S53) so as togenerate plasma using the plasma generating portion 190. The plasmamoves toward the substrate 101 and excites the source gas. Then, when areaction gas is injected through the first injection portions 141, theplasma generated using the plasma generating portion 190 excites thereaction gas. In this case, the source gas and the reaction gas may beinjected through different first injection portions 141 so as to preventthe source gas and the reaction gas from being mixed. In other words,the source gas is injected through the first injection portions 141disposed at one side of the lateral member 131, and the reaction gas isinjected through the first injection portions 141 disposed at anotherside of the lateral member 131 facing the one side of the lateral member131. Then, the exhaust process is performed through the exhaust portion121 (S54) and gas remaining after the exhaust process is removed (S55).

Hereinafter, another example of an operation of the vapor depositionapparatus 100 of the current embodiment will be described.

A thin film, for example, a silicon oxide film (SiO₂), may be formed byusing the vapor deposition apparatus 100 through chemical vapordeposition (CVD). In this regard, a silane gas is injected through thefirst injection portions 141, and oxygen is injected through the secondinjection portions 142. Also, an inert gas, for example, argon (Ar), isinjected through the second injection portions 142. Alternatively,oxygen may be injected through the first injection portions 141 throughwhich the silane gas is not injected, instead of through the secondinjection portions 142.

However, this process is just an example of a process performed by thevapor deposition apparatus 100 of the current embodiment, and thepresent invention is not limited thereto. The vapor deposition apparatus100 of the current embodiment may perform a vapor deposition process byusing any of various methods.

In the vapor deposition apparatus 100 of the current embodiment, thebody 130 includes the upper member 132 and the lateral member 131 forinjection of gas through the upper member 132 and the lateral member131. In other words, gas is injected into the space defined between theupper member 132 and the lateral member 131, and at the same time,plasma is generated in the space between the upper member 132 and thelateral member 131. Thus, a vapor deposition process for forming a thinfilm on the substrate 101 may be performed by efficiently using a spaceof the vapor deposition apparatus 100.

In particular, the upper member 132 and the lateral member 131 are notformed as one body, and are formed to be separable from each other.Thus, the extents of contamination and damage of the vapor depositionapparatus 100 due to repeatedly performing a vapor deposition processmay be easily checked to determine whether the vapor depositionapparatus 100 needs to be washed and repaired.

Also, the receiving portion 120 in which the substrate 101 is placed, isseparably formed with the body 130 so as to prevent the substrate 101from being contaminated by undesired impurity gas. In addition, theexhaust portion 121 is formed at a lower side of the receiving portion120 so as to facilitate the exhaust process.

Furthermore, the exhaust port 180 is formed in the lateral member 131 soas to easily remove residual impurity gas that is not discharged throughthe exhaust portion 121, thereby increasing the characteristic of a thinfilm formed on the substrate 101.

The slit portions 151, connected to the DC power source 150, aredisposed between the body 130 and the receiving portion 120 so as toefficiently maintain plasma generated by the plasma generating portion190, so as to effectively excite gas via the plasma, and so as to makeuniform a physical characteristic of the plasma, thereby improvingphysical characteristics, such as uniformity, density and the like, of athin film formed on the substrate 101.

FIG. 2 is a cross-sectional view schematically illustrating a vapordeposition apparatus according to another embodiment of the presentinvention.

Referring to FIG. 2, a vapor deposition apparatus 500 includes aplurality of modules A, B and C, a receiving portion 520, a stage 505, amask 510, and a driving unit 515. The modules A, B, and C include bodies130, 230, and 330, first injection portions 141, 241, and 341, secondinjection portions 142, 242, and 342, plasma generating portions 190,290, and 390, slit portions 151, 251, and 351, and plasma generatingportions 190, 290, and 380, respectively.

Hereinafter, the module A will be described in detail.

The module A includes the body 130, the first injection portions 141,the second injection portions 142, and the plasma generating portion190. The body 130 includes a lateral member 131 and an upper member 132.The plasma generating portion 190 includes a coil 191 and a plurality ofpower sources 192.

A cover 160 is disposed on the coil 191. An insulating member 170 isformed to correspond to an inner surface of the lateral member 131. Anexhaust port 180 is formed in the lateral member 131. The exhaust port180 may be connected to a pump (not shown).

The slit portions 151 are disposed between the body 130 and thereceiving portion 120, and more specifically, between the lateral member131 and the receiving portion 120.

Components included in the module A are the same as those described inthe previously described embodiment as shown in FIG. 1. In other words,the same reference numerals as in FIG. 1 represent components having thesame functions, and thus a detailed description thereof will be omitted.

Configurations of the modules B and C are the same as that of the moduleA, and thus a detailed description thereof will be omitted.

The modules A, B, and C are arranged in parallel in one direction, thatis, in an X-axis direction of FIG. 2. Although FIG. 2 illustrates threemodules, the present invention is not limited thereto. Thus, the numberof modules may be determined as desired.

The receiving portion 520 is formed to correspond to all the modules A,B, and C. That is, the receiving portion 520 is disposed at one side ofthe lateral members 131, 231, and 331 to correspond to the lateralmembers 131, 231, and 331. The receiving portion 520 includes an exhaustport 521 at a lower portion thereof. The exhaust port 521 is an exit fordischarging gas, and may be connected to a pump so as to facilitatedischarging of gas.

The stage 505 is disposed in the receiving portion 520. The substrate501 is disposed on the stage 505. In detail, the substrate 501 isdisposed on an upper surface of the stage 505.

Then, a fixing unit (not shown) may be disposed to fix the substrate 501on the stage 505. Examples of the fixing unit may include a clamp, apressure member, an adhesive material, and the like.

The mask 510 is disposed on the substrate 501. The mask 510 includes anopening (not shown) formed to have a predetermined shape correspondingto a pattern of a thin film to be formed on the substrate 501.

FIG. 6 is a flow chart illustrating an example of an operation method ofthe vapor deposition apparatus 500 of FIG. 2.

When the substrate 501 is disposed on the stage 505 (S61), the drivingunit 515 moves the substrate 501 in one direction, for example, indirection of X-axis (S62). In other words, the driving unit 570 movesthe substrate 501 in an arrow direction M parallel to the X-axisdirection of FIG. 2. Here, the driving unit 515 may move the substrate501 backward and forward in the X-axis direction.

The vapor deposition apparatus 100 of the current embodiment moves thesubstrate 501 using the driving unit 515 to form a thin film bysequentially performing a vapor deposition process in the modules A, B,and C, thereby easily forming a thin film having a desired thickness inthe substrate 501 (S63).

In particular, by allowing the driving unit 515 to reciprocate in theX-axis direction, a vapor deposition process may be easily performed inthe modules A, B, and C sequentially or in a reverse order. In otherwords, the vapor deposition process may be performed in an order of themodule A, the module B, the module C, the module B, the module A, themodule B, and the module C; however, the order of the present inventionis not limited thereto. In this regard, gas is injected to be directedto a space between the upper member and the lateral member of eachmodule, and thus a vapor deposition process may be easily performed asdesired regardless of a moving direction of the substrate 101.

FIG. 3 is a cross-sectional view schematically illustrating an organiclight-emitting display apparatus manufactured based on a method ofmanufacturing an organic light-emitting display apparatus, according toan embodiment of the present invention. Specifically, FIG. 3 illustratesan organic light-emitting display apparatus 10 manufactured using one ofthe vapor deposition apparatuses 100 and 500 according to the variousembodiments of the present invention described above.

In reference to FIG. 3, the organic light-emitting display apparatus 10is formed on a substrate 30. The substrate 30 may be formed of, forexample, glass, plastic, or metal. On the substrate 30, a buffer layer31 is formed to provide a planarized surface on the substrate 30 andprotect the substrate 30 from moisture or foreign substances.

A thin film transistor (TFT) 40, a capacitor 50, and an organiclight-emitting device (OLED) 60 are disposed on the buffer layer 31. TheTFT 40 includes an active layer 41, a gate electrode 42, andsource/drain electrodes 43. The OLED 60 includes a first electrode 61, asecond electrode 62, and an intermediate layer 63.

In detail, the active layer 41 is formed in a predetermined pattern onthe buffer layer 31. The active layer 41 may include a p-type or n-typesemiconductor material. A gate insulating layer 32 is formed on theactive layer 41. The gate electrode 42 is formed on a region of the gateinsulating layer 32 corresponding to the active layer 41. An interlayerinsulating layer 33 is formed covering the gate electrode 42, and thesource/drain electrodes 43 are disposed on the interlayer insulatinglayer 33 to contact a predetermined region of the active layer 41. Apassivation layer 34 is formed covering the source/drain electrodes 43,and an additional insulating layer (not shown) may be formed on thepassivation layer 34 so as to planarize the passivation layer 34.

The first electrode 61 is formed on the passivation layer 34. The firstelectrode 61 is electrically connected to the drain electrode 43. Apixel-defining layer 35 is formed covering the first electrode 61. Anopening 64 is formed in the pixel defining layer 35, and theintermediate layer 63 including an organic emission layer (not shown) isformed in a region defined by the opening 64. The second electrode 62 isformed on the intermediate layer 63.

An encapsulating layer 70 is formed on the second electrode 62. Theencapsulating layer 70 may contain an organic or inorganic material, andmay have a structure in which an organic layer and an inorganic layerare alternately stacked.

The encapsulating layer 70 may be formed using one of the vapordeposition apparatuses 100 and 500. In other words, the encapsulatinglayer 70 may be formed by disposing the substrate 30 on which the secondelectrode 62 is formed on the stages 105 and 505 of the vapor depositionapparatuses 100 and 500 and then performing a vapor deposition processon the substrate 30.

The present invention is however not limited thereto. For example,insulating layers included in the organic light-emitting displayapparatus 10, e.g., the buffer layer 31, the gate insulating layer 32,the interlayer insulating layer 33, the passivation layer 34, and thepixel-defining layer 35, may be formed by using a vapor depositionapparatus constructed with an embodiment of the present invention.

In addition, various thin films, e.g., the active layer 41, the gateelectrode 42, the source/drain electrode 43, the first electrode 61, theintermediate layer 63, and the second electrode 62, may also be formedusing a vapor deposition apparatus constructed with an embodiment of thepresent invention.

Here, when the vapor deposition apparatus 500 of FIG. 2 is used, it ispossible to rapidly form an insulating layer having a desired thicknessand other conductive layers, in particular, an insulating layer, forexample, the encapsulating layer 70, which needs to be formed thickerthan an electrode.

With a vapor deposition apparatus and a method of manufacturing anorganic light-emitting display apparatus according to an embodiment ofthe present invention, it is possible to efficiently perform adeposition process and to easily improve characteristics of a thin film.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

What is claimed is:
 1. A vapor deposition apparatus for depositing athin film on a substrate, the vapor deposition apparatus comprising: abody comprising an upper member and a lateral member coupled to theupper member; a receiving portion disposed to face one side of thelateral member; a stage disposed in the receiving portion, the stagesupporting the substrate; a plurality of first injection portionsdisposed in the lateral member, the plurality of first injectionportions injecting at least one gas into a space between the lateralmember and the upper member; an exhaust port disposed in the lateralmember, the exhaust port being spaced apart from each first injectionportion and having one end arranged directly above one end of each firstinfection portion that faces the space between the lateral member andthe upper member; a second injection portion disposed in the uppermember, the second injection portion injecting at least one gas into thespace between the lateral member and the upper member; and a plasmagenerating portion disposed on a lower surface of the upper member, theplasma generating portion comprising a coil and a power source connectedto the coil.
 2. The vapor deposition apparatus of claim 1, wherein thefirst injection portions are disposed at one side of the lateral memberand at another side of the lateral member disposed opposite to andfacing the one side of the lateral member.
 3. The vapor depositionapparatus of claim 1, further comprising a slit portion disposed betweenthe lateral member and the receiving portion, the slit portion connectedto a DC power source.
 4. The vapor deposition apparatus of claim 1,wherein the receiving portion comprises an exhaust portion, and theexhaust portion is disposed below the stage.
 5. The vapor depositionapparatus of claim 1, wherein the exhaust port is disposed closer to theupper member in comparison with the one end of the first injectionportion.
 6. The vapor deposition apparatus of claim 1, furthercomprising a cover formed to cover a surface of the coil with thesurface facing the substrate among surfaces of the coil.
 7. The vapordeposition apparatus of claim 6, wherein the cover is formed of aninsulating material.
 8. The vapor deposition apparatus of claim 1,further comprising an insulating member disposed in the lateral member.9. The vapor deposition apparatus of claim 8, wherein each firstinjection portion comprises one end facing the space between the lateralmember and the upper member, and the insulating member is formed not tooverlap the one end of the first injection portion.
 10. The vapordeposition apparatus of claim 1, further comprising a mask whichcomprises an opening for depositing a desired pattern on the substrate.11. The vapor deposition apparatus of claim 1, wherein the upper memberand the lateral member are formed to be coupled to or separable fromeach other.